Power

ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals.

With applications in personal electronics, automotive, industrial and enterprise systems, USB Type-C (USB-C) is an industry-standard connector that enables the transmission of both data and power on a single interface.

Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability.

Cambridge GaN Devices (CGD) and IFPEN have developed a demo which confirms the suitability of CGD’s ICeGaN 650V GaN ICs in a multi-level, 800 VDC inverter.

NXP Semiconductors has unveiled what it says is an industry-first wireless battery management system (BMS) solution with Ultra-Wideband (UWB) capabilities.

STMicroelectronics has extended the STSPIN32 series of integrated motor drivers, adding eight new products to tackle cost-sensitive yet performance-hungry applications including power tools, home appliances and industrial automation.

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture.

eInfochips has announced its expanded collaboration with NXP Semiconductors to help accelerate the development of industrial high-voltage battery energy storage systems.

Transtector has just introduced a new line of AC surge protectors for LED lighting and whole home surge protection. They are panel-style and rated to be located indoors or outdoors.

Navitas Semiconductor has announced the world’s first 8.5kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centres.